Currently a submicron soft reflow process developed in University of Manchester uses silicon nitride(Si_3N_4) as the hard mask layer to support the T-Gate structure of pHEMTs in order to make it mech...
FPackeerMAMZawawi...Proceedings of the 6th International Conference on Nano...2018-03-23国际会议
A GaAs solid state passive coplanar waveguide(CPW) left-handed metamaterial medium is proposed and validated by measured results.The unit cell of the fabricated structures has a size of 0.09 mm2.The ...
WeiTongZ.R.Hu...2006 8th International Conference on Solid-State and In...2006-10-23国际会议
This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots(QDs) solar cell devices. The devices with cylindrical geometry were fabricated and chara...
A study has just been carried out on hot electron effects in GaAs/AI_(0.3)Ga_(0.7)As potential well barrier(PWB) diodes using both Monte Carlo(MC) and drift-diffusion(DD) models of charge transport.W...
This paper discusses the design of a wideband low noise amplifier(LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applica...
